The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications, including for solar or wind power generation, as well as for inverters for electric/hybrid vehicles and smart-grid equipment. 

 

The 1200V SCT20N120 extends the ST semiconductor family with an on-resistance (RDS(ON)) better than 290mΩ, all the way to the 200° C (392° F) maximum operating junction temperature. Switching performance is also consistent over temperature, thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.

 

STMicroelectronics | www.st.com/sicmos