Enhancing the energy efficiency of solar inverters and other high-frequency power converters, the new HB series of Insulated-gate Bipolar Transistors (IGBTs) have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%. Leveraging STMicroelectronics’ (STs) “Trench-gate Field-stop High-speed Technology,” the HB series has a minimal collector-current turn-off tail, as well as very low saturation voltage (Vce(sat))—down to 1.6V (typical)—thereby minimizing energy losses during switching and when turned on. In addition, the technology is well controlled, producing a tight distribution window of parameters, enhancing repeatability, and simplifying system design.

 

The extended voltage rating of 650 V ensures at least 600 V breakdown voltage in ambient temperatures (down to -40° C | -40° F), making the devices ideal for solar inverters marketed in colder climates. The maximum operating junction temperature of 175° C (347° F), and the wide safe operating area (SOA), increase reliability and allow smaller heat sinks. Options include maximum current ratings from 30 A to 80 A (at 100° C | 212° F), a selection of popular power packages, and co-packed diode optimized for resonant or hard-switching circuits.

 

STMicroelectronics

www.st.com/igbt