Block ip Trap

Fast-recovery super-junction MOSFETs  

14 Mar 2019

STMicroelectronics' MDmesh DM6 600V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the Company's latest super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies generally that need a robust diode to handle dynamic dV/dt. The MDmesh DM6 MOSFETs have reduced reverse-recovery time (trr) to minimize power dissipation in the diode when turning off after freewheeling. Recovery softness is optimized to enhance reliability. In addition, very low gate charge (Qg) and on-resistance (RDS(ON)), together with a capacitance profile tailored for light loads, allow higher operating frequencies and greater efficiency, with simplified thermal management and reduced EMI.

 

STMicroelectronics, Inc. | http://www.st.com/stpower

 

 


Volume: 2019 March/April