900V MOSFETs

15 May 2017

STMicroelectronics addresses high power system demands with its latest 900V MDmesh K5 super-junction MOSFETs. The new series contains the first 900V MOSFETs with RDS(ON) below 100mΩ. With an extremely low gate charge (Qg), they ensure fast switching for flexibility where a wide input-voltage range is required. They are suitable for all types of flyback converters including standard, quasi-resonant, and active-clamp designs covering power ratings as low as 35W up to 230W or higher. In addition, low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

STMicroelectronics | http://www.st.com


Volume: 2017 May/June