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Silicon-carbide semiconductors

16 Mar 2015
The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications, including for solar or wind power generation, as well as for inverters for electric/hybrid vehicles and smart-grid equipment. 
 
The 1200V SCT20N120 extends the ST semiconductor family with an on-resistance (RDS(ON)) better than 290mΩ, all the way to the 200° C (392° F) maximum operating junction temperature. Switching performance is also consistent over temperature, thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
 
STMicroelectronics | http://www.st.com/sicmos
 

Volume: March/April 2015