Efficient and robust silicon-carbide diodes New!

10 Jul 2017

ST’s SiC-diode manufacturing process creates robust devices with low forward voltage (VF), giving circuit designers extra freedom to achieve high efficiency and reliability using diodes with lower current rating and therefore lower cost. This makes SiC technology more accessible for cost-conscious applications including solar inverters, industrial motor drives, home appliances, and power adapters. At the same time, performance-oriented applications that demand SiC for superior efficiency, low weight, small size, or best thermal properties can extend these advantages using ST’s latest 1200V SiC diodes. The higher efficiency margin provided by their lower forward voltage drop (VF) delivers important benefits for automotive equipment such as On-Board Battery Chargers (OBC) and charging stations for Plug-In Hybrid or Electric Vehicles (PHEV/EV). On the other hand, overall robust electrical performance ensures a perfect fit in telecom and server power supplies, high-power industrial Switched-Mode Power Supplies (SMPS) and motor drives, uninterruptible power supplies (UPS), and large solar inverters. Over and above maximizing SiC efficiency gains, achieving the lowest VF also helps reduce operating temperature and extend application lifetime. In addition, ST’s manufacturing process allows to display lower spread on the datasheet-guaranteed VF thereby enabling OEMs to ensure superior reproducibility when building circuits in high volumes. ST’s new 1200V SiC diode family covers current ratings from 2A to 40A, including automotive-qualified devices, in surface-mount DPAK HV (High-Voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (Long-Lead) packages.

STMicroelectronics | http://www.st.com

 


Volume: 2017 July/August